N-Channel Power MOSFET featuring 60V Drain-to-Source Voltage (Vdss) and 50A Continuous Drain Current (ID). This silicon Metal-oxide Semiconductor FET offers a low Drain to Source Resistance of 28mΩ. Designed for through-hole mounting in a TO-220AB package, it boasts a maximum power dissipation of 150W and operates across a wide temperature range from -55°C to 175°C. Key switching characteristics include a turn-on delay time of 14ns and a fall time of 92ns.
Checking distributor stock and pricing after the page loads.
Vishay IRFZ44 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 50A |
| Current Rating | 50A |
| Drain to Source Resistance | 28mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 92ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.01mm |
| Input Capacitance | 1.9nF |
| Lead Free | Contains Lead |
| Length | 10.41mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| RoHS Compliant | No |
| Series | IRF/SIHFZ44 |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | 60V |
| Weight | 0.211644oz |
| Width | 4.7mm |
| RoHS | Not Compliant |
No datasheet is available for this part.
