N-Channel Enhancement-Mode MOSFET with dynamic dv/dt rating, repetitive avalanche rated, 175°C operating temperature, ease of paralleling, fast switching for high efficiency, and simple drive requirements. Packaged in JEDEC TO-220AB molded plastic body. Terminals are solderable per MIL-STD-750, Method 2026. High temperature soldering is guaranteed at 250°C/10 seconds, 0.17\" (4.3mm) from case. Mounting torque is 10 in-lbs maximum. Weight is 2.0g.
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Vishay IRFZ44N technical specifications.
| Max Operating Temperature | 175 |
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-220AB |
| Number of Elements | 1 |
| Drain-Source Voltage | 55V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current (Tc = 25°C, VGS = 10V) | 49A |
| Continuous Drain Current (Tc = 100°C, VGS = 10V) | 35A |
| Pulsed Drain Current | 160A |
| Maximum Power Dissipation (Tc = 25°C) | 94W |
| Single Pulse Avalanche Energy | 210mJ |
| Avalanche Current | 25A |
| Repetitive Avalanche Energy | 11mJ |
| Operating Junction and Storage Temperature Range | -55 to 175°C |
| Junction-to-Case Thermal Resistance | 1.6°C/W |
| Junction-to-Ambient Thermal Resistance | 62°C/W |
| Drain-Source Breakdown Voltage (Min) | 55V |
| Drain-Source On-State Resistance (VGS=10V, ID=25A, Typ) | 16mΩ |
| Drain-Source On-State Resistance (VGS=10V, ID=25A, Max) | 20mΩ |
| Drain-Source On-State Resistance (VGS=6V, ID=23A, Typ) | 18mΩ |
| Drain-Source On-State Resistance (VGS=6V, ID=23A, Max) | 22mΩ |
| Gate Threshold Voltage (Min) | 2.0V |
| Gate Threshold Voltage (Max) | 4.0V |
| Forward Transconductance (Min) | 17S |
| Forward Transconductance (Typ) | 78S |
| Drain-Source Leakage Current (Max) | 25µA |
| Gate-Source Leakage (Max) | ±100nA |
| Total Gate Charge (VGS=5V, Typ) | 29nC |
| Total Gate Charge (VGS=5V, Max) | 40nC |
| Total Gate Charge (VGS=10V, Typ) | 60nC |
| Total Gate Charge (VGS=10V, Max) | 65nC |
| Gate-Source Charge (Typ) | 11nC |
| Gate-Drain ('Miller') Charge (Typ) | 13nC |
| Turn-On Delay Time (Typ) | 19ns |
| Turn-On Delay Time (Max) | 34ns |
| Rise Time (Typ) | 185ns |
| Rise Time (Max) | 240ns |
| Turn-Off Delay Time (Typ) | 85ns |
| Turn-Off Delay Time (Max) | 119ns |
| Fall Time (Typ) | 165ns |
| Fall Time (Max) | 210ns |
| Input Capacitance (Typ) | 3223pF |
| Output Capacitance (Typ) | 308pF |
| Reverse Transfer Capacitance (Typ) | 135pF |
| Continuous Source Current | 49A |
| Pulsed Source Current | 160A |
| Diode Forward Voltage (Typ) | 0.93V |
| Diode Forward Voltage (Max) | 1.3V |
| Source-Drain Reverse Recovery Time (Typ) | 53ns |
| Source-Drain Reverse Recovery Charge (Typ) | 93nC |
| Case | JEDEC TO-220AB molded plastic body |
| Mounting Torque | 10in-lbs maximum |
| Weight | 2.0g |
| RoHS | No |
| Eccn Code | EAR99 |
| REACH | unknown |
| Military Spec | False |
| Standard | MIL-STD-750 Method 2026 |
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