Vishay
IRFZ44N
Power Field-Effect Transistor, 49A I(D), 55V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N-Channel Enhancement-Mode MOSFET with dynamic dv/dt rating, repetitive avalanche rated, 175°C operating temperature, ease of paralleling, fast switching for high efficiency, and simple drive requirements. Packaged in JEDEC TO-220AB molded plastic body. Terminals are solderable per MIL-STD-750, Method 2026. High temperature soldering is guaranteed at 250°C/10 seconds, 0.17\" (4.3mm) from case. Mounting torque is 10 in-lbs maximum. Weight is 2.0g.
PackageJEDEC TO-220AB molded plastic body
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Technical Specifications
Vishay IRFZ44N technical specifications.
General
Max Operating Temperature
175
Number of Terminals
3
Terminal Position
SINGLE
JEDEC Package Code
TO-220AB
Number of Elements
1
Drain-Source Voltage
55V
Gate-Source Voltage
±20V
Continuous Drain Current (Tc = 25°C, VGS = 10V)
49A
Continuous Drain Current (Tc = 100°C, VGS = 10V)
35A
Pulsed Drain Current
160A
Maximum Power Dissipation (Tc = 25°C)
94W
Single Pulse Avalanche Energy
210mJ
Avalanche Current
25A
Repetitive Avalanche Energy
11mJ
Operating Junction and Storage Temperature Range
-55 to 175°C
Junction-to-Case Thermal Resistance
1.6°C/W
Junction-to-Ambient Thermal Resistance
62°C/W
Drain-Source Breakdown Voltage (Min)
55V
Drain-Source On-State Resistance (VGS=10V, ID=25A, Typ)
16mΩ
Drain-Source On-State Resistance (VGS=10V, ID=25A, Max)
20mΩ
Drain-Source On-State Resistance (VGS=6V, ID=23A, Typ)
18mΩ
Drain-Source On-State Resistance (VGS=6V, ID=23A, Max)
22mΩ
Gate Threshold Voltage (Min)
2.0V
Gate Threshold Voltage (Max)
4.0V
Forward Transconductance (Min)
17S
Forward Transconductance (Typ)
78S
Drain-Source Leakage Current (Max)
25µA
Gate-Source Leakage (Max)
±100nA
Total Gate Charge (VGS=5V, Typ)
29nC
Total Gate Charge (VGS=5V, Max)
40nC
Total Gate Charge (VGS=10V, Typ)
60nC
Total Gate Charge (VGS=10V, Max)
65nC
Gate-Source Charge (Typ)
11nC
Gate-Drain ('Miller') Charge (Typ)
13nC
Turn-On Delay Time (Typ)
19ns
Turn-On Delay Time (Max)
34ns
Rise Time (Typ)
185ns
Rise Time (Max)
240ns
Turn-Off Delay Time (Typ)
85ns
Turn-Off Delay Time (Max)
119ns
Fall Time (Typ)
165ns
Fall Time (Max)
210ns
Input Capacitance (Typ)
3223pF
Output Capacitance (Typ)
308pF
Reverse Transfer Capacitance (Typ)
135pF
Continuous Source Current
49A
Pulsed Source Current
160A
Diode Forward Voltage (Typ)
0.93V
Diode Forward Voltage (Max)
1.3V
Source-Drain Reverse Recovery Time (Typ)
53ns
Source-Drain Reverse Recovery Charge (Typ)
93nC
Case
JEDEC TO-220AB molded plastic body
Mounting Torque
10in-lbs maximum
Weight
2.0g
Compliance
RoHS
No
Eccn Code
EAR99
REACH
unknown
Military Spec
False
Standard
MIL-STD-750 Method 2026
Datasheet
Vishay IRFZ44N Datasheet
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