IRFZ48PBF

N-Channel Power MOSFET, 60V Vds, 50A continuous drain current (ID), and 18mΩ drain-to-source resistance (Rds On). Features include a 4V nominal gate-source voltage (Vgs), 2.4nF input capacitance, and fast switching times with turn-on delay of 8.1ns and fall time of 250ns. This silicon metal-oxide semiconductor FET is housed in a TO-220AB package for through-hole mounting, offering a maximum power dissipation of 190W and operating temperature range of -55°C to 175°C. It is lead-free and RoHS compliant.