N-Channel Power MOSFET, 60V Vds, 50A continuous drain current (ID), and 18mΩ drain-to-source resistance (Rds On). Features include a 4V nominal gate-source voltage (Vgs), 2.4nF input capacitance, and fast switching times with turn-on delay of 8.1ns and fall time of 250ns. This silicon metal-oxide semiconductor FET is housed in a TO-220AB package for through-hole mounting, offering a maximum power dissipation of 190W and operating temperature range of -55°C to 175°C. It is lead-free and RoHS compliant.
Vishay IRFZ48PBF technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Resistance | 18mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 250ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.01mm |
| Input Capacitance | 2.4nF |
| Lead Free | Lead Free |
| Length | 10.41mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 18mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 210ns |
| Turn-On Delay Time | 8.1ns |
| Weight | 0.211644oz |
| Width | 4.7mm |
| RoHS | Compliant |
No datasheet is available for this part.
