N-channel power MOSFET, 60V drain-source breakdown voltage, 50A continuous drain current, and 18mΩ Rds(on). Features include a 190W maximum power dissipation, 2.4nF input capacitance, and fast switching times with 8.1ns turn-on delay and 250ns fall time. Operates from -55°C to 175°C, housed in a TO-220AB package with through-hole mounting. This RoHS compliant component is designed for demanding power applications.
PackageTO-220-3
Current Rating50A
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay IRFZ48RPBF technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
50A
Current Rating
50A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
18mR
Drain to Source Voltage (Vdss)
60V
Fall Time
250ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Input Capacitance
2.4nF
Lead Free
Lead Free
Length
10.41mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
190W
Mount
Through Hole
Number of Channels
1
Package Quantity
1000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
190W
Radiation Hardening
No
Rds On Max
18mR
RoHS Compliant
Yes
Turn-Off Delay Time
210ns
Turn-On Delay Time
8.1ns
DC Rated Voltage
60V
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFZ48RPBF Datasheet
Download the complete datasheet for Vishay IRFZ48RPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.