N-Channel Power MOSFET, 60V Drain-Source Voltage, 50A Continuous Drain Current, and 18mΩ Drain-Source Resistance. Features a 190W maximum power dissipation and operates within a temperature range of -55°C to 175°C. This silicon Metal-Oxide Semiconductor FET is housed in a TO-263AB (D2PAK-3) surface-mount package, offering fast switching speeds with turn-on delay of 8.1ns and fall time of 250ns. RoHS compliant.
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
Power190W
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Technical Specifications
Vishay IRFZ48RSPBF technical specifications.
General
Package/Case
TO-263-3
Continuous Drain Current (ID)
50A
Drain to Source Resistance
18mR
Drain to Source Voltage (Vdss)
60V
Fall Time
250ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
2.4nF
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
190W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
1000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
190W
Radiation Hardening
No
Rds On Max
18mR
RoHS Compliant
Yes
Turn-Off Delay Time
210ns
Turn-On Delay Time
8.1ns
Weight
0.050717oz
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFZ48RSPBF Datasheet
Download the complete datasheet for Vishay IRFZ48RSPBF to view detailed technical specifications.
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