N-Channel Power MOSFET, 60V Drain-Source Voltage, 50A Continuous Drain Current, and 18mΩ Drain-Source Resistance. Features a 190W maximum power dissipation and operates within a temperature range of -55°C to 175°C. This silicon Metal-Oxide Semiconductor FET is housed in a TO-263AB (D2PAK-3) surface-mount package, offering fast switching speeds with turn-on delay of 8.1ns and fall time of 250ns. RoHS compliant.
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Vishay IRFZ48RSPBF technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Resistance | 18mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 250ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 2.4nF |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 190W |
| Radiation Hardening | No |
| Rds On Max | 18mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 210ns |
| Turn-On Delay Time | 8.1ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
| RoHS | Compliant |
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