N-Channel Power MOSFET, featuring a 100V Drain-to-Source Breakdown Voltage and a continuous drain current of 5.6A. This silicon metal-oxide semiconductor FET offers a low 540mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-220AB package, it operates within a temperature range of -55°C to 175°C with a maximum power dissipation of 43W. Key switching characteristics include a 9.3ns turn-on delay and an 18ns fall time.
PackageTO-220AB
Current Rating5.6A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRL510PBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 5.6A |
| Current Rating | 5.6A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 540mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 540mR |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 9.01mm |
| Input Capacitance | 250pF |
| Lead Free | Lead Free |
| Length | 10.41mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 43W |
| Mount | Through Hole |
| Nominal Vgs | 2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 43W |
| Radiation Hardening | No |
| Rds On Max | 540mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 9.3ns |
| DC Rated Voltage | 100V |
| Weight | 0.211644oz |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRL510PBF Datasheet
Download the complete datasheet for Vishay IRL510PBF to view detailed technical specifications.
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