N-Channel Power MOSFET featuring 100V Drain-Source Breakdown Voltage and 9.2A Continuous Drain Current. This silicon Metal-Oxide Semiconductor FET offers a maximum Drain-Source On-Resistance of 270mΩ at 10V Gate-Source Voltage. Designed for through-hole mounting in a TO-220AB package, it boasts a maximum power dissipation of 60W and operates within a temperature range of -55°C to 175°C. Key switching characteristics include a 9.8ns turn-on delay and 21ns turn-off delay.
Vishay IRL520PBF technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 9.2A |
| Current Rating | 9.2A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 270mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 270mR |
| Fall Time | 27ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 8.76mm |
| Input Capacitance | 490pF |
| Lead Free | Lead Free |
| Length | 10.54mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 60W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 60W |
| Rds On Max | 270mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 9.8ns |
| DC Rated Voltage | 100V |
| Weight | 0.211644oz |
| Width | 4.7mm |
| RoHS | Compliant |
No datasheet is available for this part.
