N-Channel Power Field-Effect Transistor, designed for through-hole mounting in a TO-220AB package. Features a 100V drain-source voltage and a continuous drain current of 15A. Offers a low 160mΩ drain-source on-resistance at a nominal Vgs of 1V. Operates within a temperature range of -55°C to 175°C with a maximum power dissipation of 88W. Includes fast switching characteristics with turn-on delay of 4.7ns and fall time of 48ns. This RoHS compliant component is constructed from silicon with a metal-oxide semiconductor FET structure.
Vishay IRL530PBF technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 15A |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 160mR |
| Fall Time | 48ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 9.01mm |
| Input Capacitance | 930pF |
| Lead Free | Lead Free |
| Length | 10.41mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 88W |
| Mount | Through Hole |
| Nominal Vgs | 1V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 88W |
| Radiation Hardening | No |
| Rds On Max | 160mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 22ns |
| Turn-On Delay Time | 4.7ns |
| Weight | 0.211644oz |
| Width | 4.7mm |
| RoHS | Compliant |
No datasheet is available for this part.
