N-Channel Power MOSFET, 100V Drain-Source Voltage, 28A Continuous Drain Current, and 77mΩ maximum Drain-Source On-Resistance. Features include 8.5ns turn-on delay, 35ns turn-off delay, and 80ns fall time. This silicon Metal-oxide Semiconductor FET is housed in a TO-220AB package with through-hole mounting. It offers a maximum power dissipation of 150W and operates within a temperature range of -55°C to 175°C.
Vishay IRL540PBF technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 28A |
| Drain to Source Resistance | 77mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 77mR |
| Fall Time | 80ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 8.76mm |
| Input Capacitance | 2.2nF |
| Lead Free | Lead Free |
| Length | 10.54mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Nominal Vgs | 2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| Rds On Max | 77mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 8.5ns |
| Weight | 0.211644oz |
| Width | 4.7mm |
| RoHS | Compliant |
No datasheet is available for this part.
