N-Channel Power MOSFET, 200V Drain-Source Voltage (Vdss) and 5.2A Continuous Drain Current (ID). Features 0.8 Ohm maximum Drain-Source On-Resistance (Rds On) and 50W maximum power dissipation. This silicon Metal-Oxide Semiconductor FET is housed in a TO-220AB package for through-hole mounting. Key switching parameters include a 4.2ns turn-on delay and 17ns fall time.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRL620 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
5.2A
Drain to Source Resistance
800mR
Drain to Source Voltage (Vdss)
200V
Fall Time
17ns
Gate to Source Voltage (Vgs)
10V
Height
9.01mm
Input Capacitance
360pF
Lead Free
Contains Lead
Length
10.41mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
50W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
800mR
RoHS Compliant
No
Turn-Off Delay Time
18ns
Turn-On Delay Time
4.2ns
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRL620 Datasheet
Download the complete datasheet for Vishay IRL620 to view detailed technical specifications.
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