N-Channel Power MOSFET, 200V Drain-Source Voltage (Vdss) and 5.2A Continuous Drain Current (ID). Features 0.8 Ohm maximum Drain-Source On-Resistance (Rds On) and 50W maximum power dissipation. This silicon Metal-Oxide Semiconductor FET is housed in a TO-220AB package for through-hole mounting. Key switching parameters include a 4.2ns turn-on delay and 17ns fall time.
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Vishay IRL620 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 5.2A |
| Drain to Source Resistance | 800mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 9.01mm |
| Input Capacitance | 360pF |
| Lead Free | Contains Lead |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 800mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 4.2ns |
| Weight | 0.211644oz |
| Width | 4.7mm |
| RoHS | Not CompliantNo |
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