N-Channel Power MOSFET featuring 200V drain-source voltage and 9A continuous drain current. This silicon Metal-Oxide-Semiconductor FET offers a low 400mΩ drain-source resistance. Designed for through-hole mounting in a TO-220-3 package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 74W. Key switching characteristics include an 8ns turn-on delay and a 33ns fall time.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Vishay IRL630 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Resistance | 400mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 33ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 9.01mm |
| Input Capacitance | 1.1nF |
| Lead Free | Contains Lead |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 74W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 400mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 38ns |
| Turn-On Delay Time | 8ns |
| Weight | 0.211644oz |
| Width | 4.7mm |
| RoHS | Not CompliantNo |
Download the complete datasheet for Vishay IRL630 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
