N-Channel Power MOSFET featuring 200V drain-source voltage and 9A continuous drain current. This silicon Metal-Oxide-Semiconductor FET offers a low 400mΩ drain-source resistance. Designed for through-hole mounting in a TO-220-3 package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 74W. Key switching characteristics include an 8ns turn-on delay and a 33ns fall time.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRL630 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
9A
Drain to Source Resistance
400mR
Drain to Source Voltage (Vdss)
200V
Fall Time
33ns
Gate to Source Voltage (Vgs)
10V
Height
9.01mm
Input Capacitance
1.1nF
Lead Free
Contains Lead
Length
10.41mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
74W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
400mR
RoHS Compliant
No
Turn-Off Delay Time
38ns
Turn-On Delay Time
8ns
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRL630 Datasheet
Download the complete datasheet for Vishay IRL630 to view detailed technical specifications.
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