N-Channel Power MOSFET featuring 200V drain-source voltage and 9A continuous drain current. This silicon Metal-Oxide-Semiconductor FET offers a low 400mΩ drain-source resistance. Designed for through-hole mounting in a TO-220-3 package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 74W. Key switching characteristics include an 8ns turn-on delay and a 33ns fall time.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRL630 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Resistance | 400mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 33ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 9.01mm |
| Input Capacitance | 1.1nF |
| Lead Free | Contains Lead |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 74W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 400mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 38ns |
| Turn-On Delay Time | 8ns |
| Weight | 0.211644oz |
| Width | 4.7mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Vishay IRL630 Datasheet
Download the complete datasheet for Vishay IRL630 to view detailed technical specifications.
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