N-Channel Power MOSFET, 200V Drain-Source Voltage, 9A Continuous Drain Current, and 400mΩ Max Drain-Source On-Resistance. Features include a 1.1nF input capacitance, 8ns turn-on delay, and 33ns fall time. This silicon Metal-Oxide-Semiconductor FET is housed in a surface-mount D2PAK package, operating from -55°C to 150°C with 3.1W max power dissipation. RoHS compliant and lead-free.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power3.1W
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Technical Specifications
Vishay IRL630SPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Resistance | 400mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 400mR |
| Fall Time | 33ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 4.83mm |
| Input Capacitance | 1.1nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.1W |
| Radiation Hardening | No |
| Rds On Max | 400mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 38ns |
| Turn-On Delay Time | 8ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRL630SPBF Datasheet
Download the complete datasheet for Vishay IRL630SPBF to view detailed technical specifications.
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