N-Channel Power MOSFET, TO-220AB package, featuring 200V drain-source breakdown voltage and 17A continuous drain current. Offers a low 180mΩ maximum drain-source on-resistance at 10V gate-source voltage. This silicon metal-oxide semiconductor FET boasts a 125W maximum power dissipation and operates from -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 8ns and fall time of 52ns. ROHS compliant and lead-free.
PackageTO-220AB
Voltage200V
Current17A
Current Rating17A
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Technical Specifications
Vishay IRL640PBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 17A |
| Current | 17A |
| Current Rating | 17A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 180mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 180mR |
| Fall Time | 52ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 9.01mm |
| Input Capacitance | 1.8nF |
| Lead Free | Lead Free |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 125W |
| Radiation Hardening | No |
| Rds On Max | 180mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 44ns |
| Turn-On Delay Time | 8ns |
| Voltage | 200V |
| DC Rated Voltage | 200V |
| Weight | 0.211644oz |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRL640PBF Datasheet
Download the complete datasheet for Vishay IRL640PBF to view detailed technical specifications.
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