N-Channel Power MOSFET with 60V Drain-Source Breakdown Voltage and 2.5A Continuous Drain Current. Features 100mΩ Maximum Drain-Source On-Resistance and 1.3W Maximum Power Dissipation. Operates across a wide temperature range from -55°C to 175°C. This silicon Metal-oxide Semiconductor FET is housed in a DIP package for through-hole mounting and is RoHS compliant.
PackageDIP
Current Rating2.5A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRLD024PBF technical specifications.
General
| Package/Case | DIP |
| Continuous Drain Current (ID) | 2.5A |
| Current Rating | 2.5A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 100mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 100mR |
| Fall Time | 110ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 3.37mm |
| Input Capacitance | 870pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 1.3W |
| Radiation Hardening | No |
| Rds On Max | 100mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 11ns |
| DC Rated Voltage | 60V |
| Width | 6.29mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRLD024PBF Datasheet
Download the complete datasheet for Vishay IRLD024PBF to view detailed technical specifications.
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