N-Channel Power MOSFET with 60V Drain-Source Breakdown Voltage and 2.5A Continuous Drain Current. Features 100mΩ Maximum Drain-Source On-Resistance and 1.3W Maximum Power Dissipation. Operates across a wide temperature range from -55°C to 175°C. This silicon Metal-oxide Semiconductor FET is housed in a DIP package for through-hole mounting and is RoHS compliant.
PackageDIP
Current Rating2.5A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRLD024PBF technical specifications.
General
Package/Case
DIP
Continuous Drain Current (ID)
2.5A
Current Rating
2.5A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
100mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
100mR
Fall Time
110ns
Gate to Source Voltage (Vgs)
10V
Height
3.37mm
Input Capacitance
870pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.3W
Mount
Through Hole
Number of Elements
1
Package Quantity
2500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
1.3W
Radiation Hardening
No
Rds On Max
100mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
2V
Turn-Off Delay Time
23ns
Turn-On Delay Time
11ns
DC Rated Voltage
60V
Width
6.29mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRLD024PBF Datasheet
Download the complete datasheet for Vishay IRLD024PBF to view detailed technical specifications.
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