N-Channel Power MOSFET, 100V Drain-Source Voltage, 9.7A Continuous Drain Current, and 160mΩ Drain-Source On-Resistance. This silicon metal-oxide semiconductor field-effect transistor features a TO-220AB package for through-hole mounting. It operates with a 10V Gate-Source Voltage and offers fast switching characteristics with a 4.7ns turn-on delay and 22ns turn-off delay. Maximum power dissipation is 42W, with an operating temperature range of -55°C to 175°C.
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Vishay IRLI530GPBF technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 9.7A |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 48ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 9.8mm |
| Input Capacitance | 930pF |
| Lead Free | Lead Free |
| Length | 10.63mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 42W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 160mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 22ns |
| Turn-On Delay Time | 4.7ns |
| Weight | 0.211644oz |
| Width | 4.83mm |
| RoHS | Compliant |
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