IRLI620GPBF

N-Channel MOSFET, 200V, 4A, 800mR Rds(on), TO-220

N-Channel Power MOSFET, TO-220-3 package, featuring 200V drain-to-source breakdown voltage and 4A continuous drain current. This silicon, metal-oxide semiconductor FET offers 0.8ohm drain-to-source resistance and 30W maximum power dissipation. Ideal for through-hole mounting, it operates across a wide temperature range from -55°C to 150°C with fast switching times including a 4.2ns turn-on delay and 17ns fall time. RoHS compliant.

PackageTO-220-3

MountingThrough Hole

PolarityN-CHANNEL

Power30W

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Technical Specifications

Vishay IRLI620GPBF technical specifications.

General

Package/Case	TO-220-3
Continuous Drain Current (ID)	4A
Drain to Source Breakdown Voltage	200V
Drain to Source Resistance	800mR
Drain to Source Voltage (Vdss)	200V
Fall Time	17ns
Gate to Source Voltage (Vgs)	10V
Input Capacitance	360pF
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	30W
Mount	Through Hole
Number of Elements	1
Package Quantity	50
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	30W
Radiation Hardening	No
Rds On Max	800mR
Reach SVHC Compliant	Unknown
RoHS Compliant	Yes
Threshold Voltage	2V
Turn-Off Delay Time	18ns
Turn-On Delay Time	4.2ns