N-Channel Power MOSFET, 200V Drain-Source Voltage (Vdss) and 6.2A Continuous Drain Current (ID). Features 400mR maximum drain-source on-resistance (Rds On) and 1V threshold voltage. Operates with a 10V gate-source voltage (Vgs) and offers fast switching with 8ns turn-on delay and 33ns fall time. Packaged in a TO-220-3 through-hole mount, this silicon metal-oxide semiconductor FET is ROHS compliant.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay IRLI630GPBF technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 6.2A |
| Drain to Source Resistance | 400mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 400mR |
| Fall Time | 33ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 9.8mm |
| Input Capacitance | 1.1nF |
| Lead Free | Lead Free |
| Length | 10.63mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 35W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 400mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 38ns |
| Turn-On Delay Time | 8ns |
| Weight | 0.211644oz |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRLI630GPBF Datasheet
Download the complete datasheet for Vishay IRLI630GPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.