N-Channel Power MOSFET, featuring a 200V drain-source voltage (Vdss) and a continuous drain current (ID) of 9.9A. This silicon, metal-oxide semiconductor FET offers a low drain-source on-resistance (Rds On) of 180mΩ and a maximum power dissipation of 40W. Designed for through-hole mounting in a TO-220AB package, it operates across a wide temperature range from -55°C to 150°C. The component boasts fast switching speeds with a turn-on delay of 8ns and a fall time of 52ns. It is RoHS compliant and lead-free.
PackageTO-220-3
Voltage200V
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRLI640GPBF technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 9.9A |
| Drain to Source Resistance | 180mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 180mR |
| Dual Supply Voltage | 200V |
| Fall Time | 52ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 9.8mm |
| Input Capacitance | 1.8nF |
| Lead Free | Lead Free |
| Length | 10.63mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Through Hole |
| Nominal Vgs | 2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 40W |
| Radiation Hardening | No |
| Rds On Max | 180mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 44ns |
| Turn-On Delay Time | 8ns |
| Voltage | 200V |
| Weight | 0.211644oz |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRLI640GPBF Datasheet
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