IRLL014PBF

N-Channel MOSFET, 60V, 2.7A, 200mR, SOT-223

N-Channel Power MOSFET, 60V Drain-Source Breakdown Voltage, 2.7A Continuous Drain Current, and 200mΩ Maximum Drain-Source On-Resistance. This silicon Metal-oxide Semiconductor FET features a 2W maximum power dissipation and operates within a temperature range of -55°C to 150°C. Designed for surface mounting in a SOT-223 package, it offers fast switching characteristics with turn-on delay time of 9.3ns and fall time of 26ns. RoHS compliant and lead-free.

PackageSOT-223

Current Rating2.7A

MountingSurface Mount

PolarityN-CHANNEL

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Technical Specifications

Vishay IRLL014PBF technical specifications.

General

Package/Case	SOT-223
Continuous Drain Current (ID)	2.7A
Current Rating	2.7A
Drain to Source Breakdown Voltage	60V
Drain to Source Resistance	200mR
Drain to Source Voltage (Vdss)	60V
Drain-source On Resistance-Max	200mR
Fall Time	26ns
Gate to Source Voltage (Vgs)	10V
Height	1.8mm
Input Capacitance	400pF
Lead Free	Lead Free
Length	6.7mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	2W
Mount	Surface Mount
Number of Channels	1
Number of Elements	1
Package Quantity	4000
Packaging	Rail/Tube
Polarity	N-CHANNEL
Polarization	N
Power Dissipation	2W
Rds On Max	200mR
Reach SVHC Compliant	Unknown
RoHS Compliant	Yes
Threshold Voltage	2V
Turn-Off Delay Time	17ns
Turn-On Delay Time	9.3ns
DC Rated Voltage	60V
Weight	0.008826oz
Width	3.7mm