N-Channel Power MOSFET, 60V Drain-Source Breakdown Voltage, 2.7A Continuous Drain Current, and 200mΩ Maximum Drain-Source On-Resistance. This silicon Metal-oxide Semiconductor FET features a 2W maximum power dissipation and operates within a temperature range of -55°C to 150°C. Designed for surface mounting in a SOT-223 package, it offers fast switching characteristics with turn-on delay time of 9.3ns and fall time of 26ns. RoHS compliant and lead-free.
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Vishay IRLL014PBF technical specifications.
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 2.7A |
| Current Rating | 2.7A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 200mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 200mR |
| Fall Time | 26ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 1.8mm |
| Input Capacitance | 400pF |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 4000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 2W |
| Rds On Max | 200mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 9.3ns |
| DC Rated Voltage | 60V |
| Weight | 0.008826oz |
| Width | 3.7mm |
| RoHS | Compliant |
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