N-Channel Silicon Metal-oxide Semiconductor FET for power applications. Features 100V drain-source voltage and 1.5A continuous drain current. Offers a maximum drain-source on-resistance of 540mΩ. Operates with a gate-source voltage of 10V and has a maximum power dissipation of 3.1W. Packaged in a surface-mount SOIC-4 (SOT-223) case.
PackageSOT-223
MountingSurface Mount
PolarityN-CHANNEL
Power2W
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Technical Specifications
Vishay IRLL110 technical specifications.
General
Package/Case
SOT-223
Continuous Drain Current (ID)
1.5A
Drain to Source Resistance
540mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
540mR
Fall Time
18ns
Gate to Source Voltage (Vgs)
10V
Height
1.45mm
Input Capacitance
250pF
Lead Free
Contains Lead
Length
6.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.1W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
80
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
2W
Rds On Max
540mR
RoHS Compliant
No
Turn-Off Delay Time
16ns
Turn-On Delay Time
9.3ns
Weight
0.008826oz
Width
3.7mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRLL110 Datasheet
Download the complete datasheet for Vishay IRLL110 to view detailed technical specifications.
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