N-Channel Silicon Metal-oxide Semiconductor FET for power applications. Features 100V drain-source voltage and 1.5A continuous drain current. Offers a maximum drain-source on-resistance of 540mΩ. Operates with a gate-source voltage of 10V and has a maximum power dissipation of 3.1W. Packaged in a surface-mount SOIC-4 (SOT-223) case.
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| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 1.5A |
| Drain to Source Resistance | 540mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 540mR |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 1.45mm |
| Input Capacitance | 250pF |
| Lead Free | Contains Lead |
| Length | 6.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 80 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 540mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 9.3ns |
| Weight | 0.008826oz |
| Width | 3.7mm |
| RoHS | Not Compliant |
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