N-Channel Silicon Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed for small signal applications. Features a 100V Drain to Source Breakdown Voltage (Vdss) and a maximum continuous drain current (ID) of 1.5A. Offers a low Drain-source On-Resistance (Rds On) of 540mR. Operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 3.1W. Packaged in a surface-mount SOT-223 case, this RoHS compliant component is suitable for various electronic circuits.
PackageSOT-223
Current Rating1.5A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRLL110PBF technical specifications.
General
Package/Case
SOT-223
Continuous Drain Current (ID)
1.5A
Current Rating
1.5A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
540mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
540mR
Fall Time
18ns
Gate to Source Voltage (Vgs)
10V
Height
1.45mm
Input Capacitance
250pF
Lead Free
Lead Free
Length
6.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.1W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
4000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
2W
Radiation Hardening
No
Rds On Max
540mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
2V
Turn-Off Delay Time
16ns
Turn-On Delay Time
9.3ns
DC Rated Voltage
100V
Weight
0.008826oz
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRLL110PBF Datasheet
Download the complete datasheet for Vishay IRLL110PBF to view detailed technical specifications.
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