N-Channel Power MOSFET, featuring 100V Drain-Source Voltage (Vdss) and 1.5A Continuous Drain Current (ID). This silicon Metal-oxide Semiconductor FET offers a low 540mΩ Drain-Source On-Resistance (Rds On Max). Designed for surface mounting, it comes in a SOT-223 package with dimensions of 6.7mm length, 3.7mm width, and 1.45mm height. Key switching characteristics include a 9.3ns turn-on delay and 18ns fall time. Maximum power dissipation is rated at 3.1W, with operating temperatures ranging from -55°C to 150°C.
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| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 1.5A |
| Current Rating | 1.5A |
| Drain to Source Resistance | 540mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 1.45mm |
| Input Capacitance | 250pF |
| Lead Free | Contains Lead |
| Length | 6.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 540mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 9.3ns |
| DC Rated Voltage | 100V |
| Weight | 0.008826oz |
| Width | 3.7mm |
| RoHS | Not Compliant |
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