N-channel, single-element, silicon Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) designed for surface mounting in a SOT-223 package. Features a continuous drain current of 1.5A, a drain-source voltage of 100V, and a maximum drain-source on-resistance of 540mΩ. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 3.1W. Includes fast switching characteristics with turn-on delay time of 9.3ns and fall time of 18ns. RoHS compliant and supplied in tape and reel packaging.
PackageSOT-223
MountingSurface Mount
PolarityN-CHANNEL
Power2W
Quick Jump:
Technical Specifications
Vishay IRLL110TRPBF technical specifications.
General
Package/Case
SOT-223
Continuous Drain Current (ID)
1.5A
Drain to Source Resistance
540mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
540mR
Fall Time
18ns
Gate to Source Voltage (Vgs)
10V
Height
1.45mm
Input Capacitance
250pF
Lead Free
Lead Free
Length
6.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.1W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2W
Radiation Hardening
No
Rds On Max
540mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
2V
Turn-Off Delay Time
16ns
Turn-On Delay Time
9.3ns
Weight
0.008826oz
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRLL110TRPBF Datasheet
Download the complete datasheet for Vishay IRLL110TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.