N-channel, single-element, silicon Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) designed for surface mounting in a SOT-223 package. Features a continuous drain current of 1.5A, a drain-source voltage of 100V, and a maximum drain-source on-resistance of 540mΩ. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 3.1W. Includes fast switching characteristics with turn-on delay time of 9.3ns and fall time of 18ns. RoHS compliant and supplied in tape and reel packaging.
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Vishay IRLL110TRPBF technical specifications.
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 1.5A |
| Drain to Source Resistance | 540mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 540mR |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 1.45mm |
| Input Capacitance | 250pF |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 540mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 9.3ns |
| Weight | 0.008826oz |
| Width | 3.7mm |
| RoHS | Compliant |
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