N-Channel Power MOSFET, DPAK package, featuring 60V drain-source voltage and 7.7A continuous drain current. Offers a low 200mΩ maximum drain-source on-resistance at a nominal 2V gate-source voltage. This silicon Metal-oxide Semiconductor FET boasts a 2.5W maximum power dissipation and is RoHS compliant. Ideal for surface mount applications, it exhibits fast switching characteristics with a 9.3ns turn-on delay and 26ns fall time.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Vishay IRLR014PBF technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
7.7A
Drain to Source Resistance
280mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
200mR
Fall Time
26ns
Gate to Source Voltage (Vgs)
10V
Height
2.39mm
Input Capacitance
400pF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Nominal Vgs
2V
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
200mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
2V
Turn-Off Delay Time
17ns
Turn-On Delay Time
9.3ns
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRLR014PBF Datasheet
Download the complete datasheet for Vishay IRLR014PBF to view detailed technical specifications.
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