N-channel MOSFET transistor with 60V drain-source breakdown voltage and 7.7A continuous drain current. Features a 200mΩ maximum drain-source on-resistance and 2.5W power dissipation. Operates within a -55°C to 150°C temperature range. Packaged in a TO-251-3 (IPAK) through-hole mount with 3 leads. RoHS compliant and lead-free.
PackageTO-251-3
Current Rating7.7A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRLU014PBF technical specifications.
General
Package/Case
TO-251-3
Continuous Drain Current (ID)
7.7A
Current Rating
7.7A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
200mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
200mR
Fall Time
26ns
Gate to Source Voltage (Vgs)
10V
Height
6.22mm
Input Capacitance
400pF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Through Hole
Number of Channels
1
Package Quantity
75
Packaging
Rail/Tube
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
200mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
2V
Turn-Off Delay Time
17ns
Turn-On Delay Time
9.3ns
DC Rated Voltage
60V
Weight
0.01164oz
Width
2.39mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRLU014PBF Datasheet
Download the complete datasheet for Vishay IRLU014PBF to view detailed technical specifications.
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