N-Channel Power MOSFET, featuring 60V drain-source breakdown voltage and 10A continuous drain current. This silicon, metal-oxide semiconductor field-effect transistor offers a low 200mΩ drain-source on-resistance. Designed for through-hole mounting in a TO-220AB package, it operates within a temperature range of -55°C to 175°C with a maximum power dissipation of 43W. Key switching characteristics include a 9.3ns turn-on delay and a 26ns fall time.
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Vishay IRLZ14PBF technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 10A |
| Current Rating | 10A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 200mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 200mR |
| Fall Time | 26ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 9.01mm |
| Input Capacitance | 400pF |
| Lead Free | Lead Free |
| Length | 10.41mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 43W |
| Mount | Through Hole |
| Nominal Vgs | 2V |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 43W |
| Radiation Hardening | No |
| Rds On Max | 200mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 9.3ns |
| DC Rated Voltage | 60V |
| Weight | 0.211644oz |
| Width | 4.7mm |
| RoHS | Compliant |
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