N-Channel Power MOSFET, featuring 60V drain-source breakdown voltage and 10A continuous drain current. This silicon, metal-oxide semiconductor field-effect transistor offers a low 200mΩ drain-source on-resistance. Designed for through-hole mounting in a TO-220AB package, it operates within a temperature range of -55°C to 175°C with a maximum power dissipation of 43W. Key switching characteristics include a 9.3ns turn-on delay and a 26ns fall time.
PackageTO-220AB
Current Rating10A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRLZ14PBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
10A
Current Rating
10A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
200mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
200mR
Fall Time
26ns
Gate to Source Voltage (Vgs)
10V
Height
9.01mm
Input Capacitance
400pF
Lead Free
Lead Free
Length
10.41mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
43W
Mount
Through Hole
Nominal Vgs
2V
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
43W
Radiation Hardening
No
Rds On Max
200mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
2V
Turn-Off Delay Time
17ns
Turn-On Delay Time
9.3ns
DC Rated Voltage
60V
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRLZ14PBF Datasheet
Download the complete datasheet for Vishay IRLZ14PBF to view detailed technical specifications.
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