NPN phototransistor with a 30V collector-emitter breakdown voltage, designed for infrared detection at 940nm. Features a 20° viewing angle and a domed lens style for efficient light capture. This through-hole component offers a maximum collector current of 3.6mA and a power dissipation of 100mW, operating within a temperature range of -40°C to 85°C. Includes a fall time of 15µs and is RoHS compliant.
PackageRadial
MountingThrough Hole
PolarityNPN
Power100mW
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Technical Specifications
Vishay LTR-3208E technical specifications.
General
Package/Case
Radial
Collector Emitter Breakdown Voltage
30V
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
30V
Fall Time
15us
Lead Free
Lead Free
Lens Style
Domed
Max Collector Current
3.6mA
Max Operating Temperature
85°C
Min Operating Temperature
-40°C
Max Power Dissipation
100mW
Mount
Through Hole
Number of Elements
1
Orientation
Top View
Output Power
100mW
Package Quantity
1000
Packaging
Bulk
Polarity
NPN
Power Dissipation
100mW
Radiation Hardening
No
RoHS Compliant
Yes
Viewing Angle
20°
Wavelength
940nm
Compliance
RoHS
Compliant
Datasheet
Vishay LTR-3208E Datasheet
Download the complete datasheet for Vishay LTR-3208E to view detailed technical specifications.
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