NPN phototransistor with a 30V collector-emitter breakdown voltage, designed for infrared detection at 940nm. Features a 20° viewing angle and a domed lens style for efficient light capture. This through-hole component offers a maximum collector current of 3.6mA and a power dissipation of 100mW, operating within a temperature range of -40°C to 85°C. Includes a fall time of 15µs and is RoHS compliant.
PackageRadial
MountingThrough Hole
PolarityNPN
Power100mW
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Technical Specifications
Vishay LTR-3208E technical specifications.
General
| Package/Case | Radial |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 30V |
| Fall Time | 15us |
| Lead Free | Lead Free |
| Lens Style | Domed |
| Max Collector Current | 3.6mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 100mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Orientation | Top View |
| Output Power | 100mW |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 100mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Viewing Angle | 20° |
| Wavelength | 940nm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay LTR-3208E Datasheet
Download the complete datasheet for Vishay LTR-3208E to view detailed technical specifications.
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