Single bridge rectifier diode with a maximum repetitive peak reverse voltage of 200V and a minimum breakdown voltage of 200V. Features four silicon diode elements in a 4-pin TO-269AA package. Operating temperature range spans from -50°C to 150°C. This component is designed for through-hole mounting with dual terminal positions.
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Technical Specifications
Vishay MB2S-E3/80 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 4 |
| Min Operating Temperature | -50 |
| Terminal Position | DUAL |
| JEDEC Package Code | TO-269AA |
| Pin Count | 4 |
| Number of Elements | 4 |
| Diode Element Material | SILICON |
| Diode Type | BRIDGE RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 200 |
| Breakdown Voltage-Min | 200 |
Compliance
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.70 |
| REACH | unknown |
| Military Spec | False |
Datasheet
Vishay MB2S-E3/80 Datasheet
Download the complete datasheet for Vishay MB2S-E3/80 to view detailed technical specifications.
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