
Single bridge rectifier diode with a maximum repetitive peak reverse voltage of 200V and a minimum breakdown voltage of 200V. Features four silicon diode elements in a 4-pin TO-269AA package. Operating temperature range spans from -50°C to 150°C. This component is designed for through-hole mounting with dual terminal positions.
Sign in to ask questions about the Vishay MB2S-E3/80 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Vishay MB2S-E3/80 technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 4 |
| Min Operating Temperature | -50 |
| Terminal Position | DUAL |
| JEDEC Package Code | TO-269AA |
| Pin Count | 4 |
| Number of Elements | 4 |
| Diode Element Material | SILICON |
| Diode Type | BRIDGE RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 200 |
| Breakdown Voltage-Min | 200 |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.70 |
| REACH | unknown |
| Military Spec | False |
Download the complete datasheet for Vishay MB2S-E3/80 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.