This unidirectional transient voltage suppressor diode features a silicon element with a nominal breakdown voltage of 200V and a maximum reverse voltage of 171V. It has a maximum power dissipation of 5W and a maximum non-repetitive peak reverse power dissipation of 600W. The diode operates within a temperature range of -65°C to 150°C and is packaged in a DO-214AA mold with a 2-terminal dual position. It is suitable for use in applications requiring transient voltage suppression.
PolarityUNIDIRECTIONAL
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Technical Specifications
Vishay P6SMB200AHE3_A/H technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Min Operating Temperature | -65 |
| Terminal Position | DUAL |
| JEDEC Package Code | DO-214AA |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 171 |
| Breakdown Voltage-Min | 190 |
| Non-rep Peak Rev Power Dis-Max | 600 |
| Clamping Voltage-Max | 274 |
| Breakdown Voltage-Nom | 200 |
| Breakdown Voltage-Max | 210 |
| Power Dissipation-Max | 5 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Vishay P6SMB200AHE3_A/H Datasheet
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