The P6SMB62AHE3_A/I is a unidirectional silicon transient voltage suppressor diode with a maximum operating temperature of 150 degrees Celsius and a minimum operating temperature of -65 degrees Celsius. It has a nominal breakdown voltage of 62 volts and a maximum breakdown voltage of 65.1 volts. The diode can handle a maximum non-repetitive peak reverse power dissipation of 600 watts and a maximum power dissipation of 5 watts. It is packaged in a 2-terminal DO-214AA package.
PolarityUNIDIRECTIONAL
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Technical Specifications
Vishay P6SMB62AHE3_A/I technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Min Operating Temperature | -65 |
| Terminal Position | DUAL |
| JEDEC Package Code | DO-214AA |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 53 |
| Breakdown Voltage-Min | 58.9 |
| Non-rep Peak Rev Power Dis-Max | 600 |
| Clamping Voltage-Max | 85 |
| Breakdown Voltage-Nom | 62 |
| Breakdown Voltage-Max | 65.1 |
| Power Dissipation-Max | 5 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Vishay P6SMB62AHE3_A/I Datasheet
Download the complete datasheet for Vishay P6SMB62AHE3_A/I to view detailed technical specifications.
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