RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-4
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| Continuous Drain Current (ID) | 20mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 160mW |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Packaging | Tape and Reel |
| RoHS Compliant | No |
| RoHS | Not Compliant |
