N-channel, small-signal, general-purpose JFET transistor designed for surface mount applications. Features a 20V drain-source voltage (Vdss) and a maximum continuous drain current (ID) of 630mA. Offers a low drain-source on-resistance (Rds On) of 330mR, with a maximum of 396mR. Includes fast switching characteristics with a 11ns turn-on delay and 11ns fall time. Operates within a temperature range of -55°C to 150°C and is housed in a compact SC-75A package. This component is RoHS compliant and halogen-free.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI1012CR-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
630mA
Drain to Source Resistance
330mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
396mR
Fall Time
11ns
Gate to Source Voltage (Vgs)
8V
Height
0.8mm
Input Capacitance
43pF
Lead Free
Lead Free
Length
1.68mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
240mW
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
396mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
400mV
Turn-Off Delay Time
26ns
Turn-On Delay Time
11ns
Weight
7.1E-05oz
Width
0.86mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI1012CR-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI1012CR-T1-GE3 to view detailed technical specifications.
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