N-channel, small-signal, general-purpose JFET transistor designed for surface mount applications. Features a 20V drain-source voltage (Vdss) and a maximum continuous drain current (ID) of 630mA. Offers a low drain-source on-resistance (Rds On) of 330mR, with a maximum of 396mR. Includes fast switching characteristics with a 11ns turn-on delay and 11ns fall time. Operates within a temperature range of -55°C to 150°C and is housed in a compact SC-75A package. This component is RoHS compliant and halogen-free.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Vishay SI1012CR-T1-GE3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Vishay SI1012CR-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 630mA |
| Drain to Source Resistance | 330mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 396mR |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.8mm |
| Input Capacitance | 43pF |
| Lead Free | Lead Free |
| Length | 1.68mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 240mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 396mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 400mV |
| Turn-Off Delay Time | 26ns |
| Turn-On Delay Time | 11ns |
| Weight | 7.1E-05oz |
| Width | 0.86mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI1012CR-T1-GE3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
