Dual-channel N-channel and P-channel small signal MOSFET for general-purpose applications. Features a 20V drain-source voltage, 600mA continuous drain current, and low 396mΩ Rds(on). Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 220mW. Packaged in a compact SOT-563-6 (SC-89) surface-mount case, this RoHS and halogen-free component is supplied on tape and reel.
PackageSOT-563-6
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
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Technical Specifications
Vishay SI1016CX-T1-GE3 technical specifications.
General
Package/Case
SOT-563-6
Continuous Drain Current (ID)
600mA
Drain to Source Resistance
630mR
Drain to Source Voltage (Vdss)
20V
Fall Time
11ns
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
8V
Height
600um
Input Capacitance
43pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
220mW
Mount
Surface Mount
Number of Channels
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL, P-CHANNEL
Radiation Hardening
No
Rds On Max
396mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
400mV
Turn-Off Delay Time
26ns
Turn-On Delay Time
11ns
Weight
0.000289oz
Compliance
RoHS
Compliant
Datasheet
Vishay SI1016CX-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI1016CX-T1-GE3 to view detailed technical specifications.
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