Dual-channel N-channel and P-channel small signal MOSFET for general-purpose applications. Features a 20V drain-source voltage, 600mA continuous drain current, and low 396mΩ Rds(on). Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 220mW. Packaged in a compact SOT-563-6 (SC-89) surface-mount case, this RoHS and halogen-free component is supplied on tape and reel.
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Vishay SI1016CX-T1-GE3 technical specifications.
| Package/Case | SOT-563-6 |
| Continuous Drain Current (ID) | 600mA |
| Drain to Source Resistance | 630mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 11ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 600um |
| Input Capacitance | 43pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 220mW |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 396mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 400mV |
| Turn-Off Delay Time | 26ns |
| Turn-On Delay Time | 11ns |
| Weight | 0.000289oz |
| RoHS | Compliant |
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