P-channel TrenchFET® Junction Field-Effect Transistor (JFET) for surface mount applications. Features a -60V Drain to Source Breakdown Voltage (Vdss) and a continuous drain current (ID) of 190mA. Offers a low Drain-source On Resistance (Rds On) of 4 Ohms maximum. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 250mW. Packaged in a compact SOT-416 (SC-75A) case, supplied on tape and reel.
PackageSOT-416
MountingSurface Mount
PolarityP-CHANNEL
Power250mW
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Technical Specifications
Vishay SI1021R-T1-GE3 technical specifications.
General
Package/Case
SOT-416
Continuous Drain Current (ID)
190mA
Drain to Source Breakdown Voltage
-60V
Drain to Source Resistance
8R
Drain to Source Voltage (Vdss)
-60V
Drain-source On Resistance-Max
4R
Gate to Source Voltage (Vgs)
20V
Height
0.7mm
Input Capacitance
23pF
Lead Free
Lead Free
Length
1.58mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
250mW
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Polarization
P
Power Dissipation
250mW
Radiation Hardening
No
Rds On Max
4R
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-3V
Turn-Off Delay Time
35ns
Turn-On Delay Time
20ns
Width
0.76mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI1021R-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI1021R-T1-GE3 to view detailed technical specifications.
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