N-channel TrenchFET® MOSFET with 60V drain-source voltage and 330mA continuous drain current. Features low 1.25Ω maximum drain-source on-resistance and 2.5V threshold voltage. Surface mountable in a 3-pin SC-75A package, this component operates from -55°C to 150°C with 250mW maximum power dissipation. RoHS compliant and lead-free.
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Vishay SI1022R-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 330mA |
| Drain to Source Resistance | 1.25R |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 3R |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.7mm |
| Input Capacitance | 30pF |
| Lead Free | Lead Free |
| Length | 1.58mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 1.25R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2.5V |
| Width | 0.76mm |
| RoHS | Compliant |
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