N-channel TrenchFET® MOSFET with 60V drain-source voltage and 330mA continuous drain current. Features low 1.25Ω maximum drain-source on-resistance and 2.5V threshold voltage. Surface mountable in a 3-pin SC-75A package, this component operates from -55°C to 150°C with 250mW maximum power dissipation. RoHS compliant and lead-free.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI1022R-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
330mA
Drain to Source Resistance
1.25R
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
3R
Gate to Source Voltage (Vgs)
20V
Height
0.7mm
Input Capacitance
30pF
Lead Free
Lead Free
Length
1.58mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
250mW
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
1.25R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
2.5V
Width
0.76mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI1022R-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI1022R-T1-GE3 to view detailed technical specifications.
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