Dual N-Channel MOSFET, 20V Vdss, 485mA continuous drain current, and 700mΩ drain-source on-resistance. Features a SOT-563-6 surface mount package with dimensions of 1.7mm (L) x 1.2mm (W) x 0.6mm (H). Operates from -55°C to 150°C with a maximum power dissipation of 250mW. RoHS compliant and lead-free.
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Vishay SI1024X-T1-E3 technical specifications.
| Package/Case | SOT-563-6 |
| Continuous Drain Current (ID) | 485mA |
| Drain to Source Resistance | 700mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 700mR |
| Dual Supply Voltage | 20V |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 6V |
| Height | 0.6mm |
| Lead Free | Lead Free |
| Length | 1.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Nominal Vgs | 900mV |
| Number of Channels | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 700mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Termination | SMD/SMT |
| Threshold Voltage | 900mV |
| Weight | 0.000289oz |
| Width | 1.2mm |
| RoHS | Compliant |
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