P-Channel TrenchFET® JFET with -60V Drain-Source Voltage (Vdss) and 190mA Continuous Drain Current (ID). Features 4Ω maximum Drain-Source On-Resistance (Rds On) and 20V Gate-to-Source Voltage (Vgs). Operates from -55°C to 150°C with 250mW maximum power dissipation. Surface mountable in a 6-pin SOT-563F package, this component is RoHS compliant and supplied on tape and reel.
PackageSC
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI1025X-T1-GE3 technical specifications.
General
Package/Case
SC
Continuous Drain Current (ID)
190mA
Drain to Source Resistance
8R
Drain to Source Voltage (Vdss)
-60V
Drain-source On Resistance-Max
4R
Gate to Source Voltage (Vgs)
20V
Height
0.6mm
Input Capacitance
23pF
Lead Free
Lead Free
Length
1.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
250mW
Mount
Surface Mount
Number of Channels
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
4R
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-3V
Weight
0.001129oz
Width
1.2mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI1025X-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI1025X-T1-GE3 to view detailed technical specifications.
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