P-Channel TrenchFET® JFET with -60V Drain-Source Voltage (Vdss) and 190mA Continuous Drain Current (ID). Features 4Ω maximum Drain-Source On-Resistance (Rds On) and 20V Gate-to-Source Voltage (Vgs). Operates from -55°C to 150°C with 250mW maximum power dissipation. Surface mountable in a 6-pin SOT-563F package, this component is RoHS compliant and supplied on tape and reel.
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Vishay SI1025X-T1-GE3 technical specifications.
| Package/Case | SC |
| Continuous Drain Current (ID) | 190mA |
| Drain to Source Resistance | 8R |
| Drain to Source Voltage (Vdss) | -60V |
| Drain-source On Resistance-Max | 4R |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.6mm |
| Input Capacitance | 23pF |
| Lead Free | Lead Free |
| Length | 1.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 4R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -3V |
| Weight | 0.001129oz |
| Width | 1.2mm |
| RoHS | Compliant |
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