N-Channel Junction Field-Effect Transistor (JFET) with 60V Drain to Source Breakdown Voltage and 305mA Continuous Drain Current. Features a maximum Drain-source On Resistance of 1.4 Ohms and a Gate to Source Voltage of 20V. This surface mount component operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 250mW. Supplied in a 6-pin SOT-563F package on tape and reel.
PackageSC
MountingSurface Mount
PolarityN-CHANNEL
Power250mW
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Technical Specifications
Vishay SI1026X-T1-GE3 technical specifications.
General
Package/Case
SC
Continuous Drain Current (ID)
305mA
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
1.4R
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
3R
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Height
0.6mm
Input Capacitance
30pF
Lead Free
Lead Free
Length
1.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
250mW
Mount
Surface Mount
Number of Channels
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
250mW
Radiation Hardening
No
Rds On Max
1.4R
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
2.5V
Turn-Off Delay Time
20ns
Turn-On Delay Time
15ns
Weight
0.001129oz
Width
1.2mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI1026X-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI1026X-T1-GE3 to view detailed technical specifications.
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