Vishay
SI1028X-T1-GE3
VISHAY SI1028X-T1-GE3 Dual MOSFET, Dual N Channel, 480 mA, 30 V, 0.54 ohm, 10 V, 1 V
PackageSC
MountingSurface Mount
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Technical Specifications
Vishay SI1028X-T1-GE3 technical specifications.
General
Package/Case
SC
Continuous Drain Current (ID)
480mA
Drain to Source Voltage (Vdss)
30V
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Height
0.6mm
Input Capacitance
16pF
Length
1.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
220mW
Mount
Surface Mount
Packaging
Tape and Reel
Radiation Hardening
No
Rds On Max
650mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
1V
Turn-Off Delay Time
9ns
Turn-On Delay Time
8ns
Width
1.7mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI1028X-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI1028X-T1-GE3 to view detailed technical specifications.
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