VISHAY SI1028X-T1-GE3 Dual MOSFET, Dual N Channel, 480 mA, 30 V, 0.54 ohm, 10 V, 1 V
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Vishay SI1028X-T1-GE3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | SC |
| Continuous Drain Current (ID) | 480mA |
| Drain to Source Voltage (Vdss) | 30V |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.6mm |
| Input Capacitance | 16pF |
| Length | 1.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 220mW |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 650mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 9ns |
| Turn-On Delay Time | 8ns |
| Width | 1.7mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI1028X-T1-GE3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
