N-channel and P-channel MOSFET featuring 60V drain-source voltage and 190mA continuous drain current. Surface mountable in a compact SOT563F package, this component offers a low drain-source on-resistance of 1.4 Ohms at a nominal gate-source voltage of 2.5V. Operating across a wide temperature range of -55°C to 150°C, it boasts a maximum power dissipation of 250mW and includes fast switching characteristics with turn-on delay of 20ns and turn-off delay of 35ns.
PackageSC
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
Power250mW
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Technical Specifications
Vishay SI1029X-T1-E3 technical specifications.
General
Package/Case
SC
Continuous Drain Current (ID)
190mA
Drain to Source Resistance
4R
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
4R
Dual Supply Voltage
60V
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
20V
Height
0.6mm
Input Capacitance
30pF
Lead Free
Lead Free
Length
1.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
250mW
Mount
Surface Mount
Nominal Vgs
2.5V
Number of Channels
2
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL, P-CHANNEL
Power Dissipation
250mW
Rds On Max
1.4R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Termination
SMD/SMT
Threshold Voltage
2.5V
Turn-Off Delay Time
35ns
Turn-On Delay Time
20ns
Weight
0.001129oz
Width
1.2mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI1029X-T1-E3 Datasheet
Download the complete datasheet for Vishay SI1029X-T1-E3 to view detailed technical specifications.
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