N-channel JFET with 20V drain-source breakdown voltage and 140mA continuous drain current. Features 5 Ohm maximum drain-source on-resistance and 900mV threshold voltage. Operates from -55°C to 150°C with 250mW maximum power dissipation. Packaged in a 3-pin SC-75A surface-mount case, supplied on tape and reel.
PackageSC
MountingSurface Mount
PolarityN-CHANNEL
Power250mW
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Technical Specifications
Vishay SI1032R-T1-GE3 technical specifications.
General
Package/Case
SC
Continuous Drain Current (ID)
140mA
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
5R
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
5R
Fall Time
25ns
Gate to Source Voltage (Vgs)
6V
Height
0.7mm
Lead Free
Lead Free
Length
1.58mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
250mW
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
250mW
Radiation Hardening
No
Rds On Max
5R
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
900mV
Turn-Off Delay Time
50ns
Turn-On Delay Time
50ns
Width
0.76mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI1032R-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI1032R-T1-GE3 to view detailed technical specifications.
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