N-channel JFET with 20V drain-source breakdown voltage and 140mA continuous drain current. Features 5 Ohm maximum drain-source on-resistance and 900mV threshold voltage. Operates from -55°C to 150°C with 250mW maximum power dissipation. Packaged in a 3-pin SC-75A surface-mount case, supplied on tape and reel.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Vishay SI1032R-T1-GE3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Vishay SI1032R-T1-GE3 technical specifications.
| Package/Case | SC |
| Continuous Drain Current (ID) | 140mA |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 5R |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 5R |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 6V |
| Height | 0.7mm |
| Lead Free | Lead Free |
| Length | 1.58mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 250mW |
| Radiation Hardening | No |
| Rds On Max | 5R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 900mV |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 50ns |
| Width | 0.76mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI1032R-T1-GE3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
