N-channel JFET with 20V drain-source breakdown voltage and 140mA continuous drain current. Features 5 Ohm maximum drain-source on-resistance and 900mV threshold voltage. Operates from -55°C to 150°C with 250mW maximum power dissipation. Packaged in a 3-pin SC-75A surface-mount case, supplied on tape and reel.
PackageSC
MountingSurface Mount
PolarityN-CHANNEL
Power250mW
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Technical Specifications
Vishay SI1032R-T1-GE3 technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 140mA |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 5R |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 5R |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 6V |
| Height | 0.7mm |
| Lead Free | Lead Free |
| Length | 1.58mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 250mW |
| Radiation Hardening | No |
| Rds On Max | 5R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 900mV |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 50ns |
| Width | 0.76mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI1032R-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI1032R-T1-GE3 to view detailed technical specifications.
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