N-channel JFET transistor, surface mountable in an SC-89 package. Features 20V drain-source voltage (Vdss) and 200mA continuous drain current (ID). Offers a low drain-source on-resistance (Rds On) of 5 Ohms. Operates with a gate-source voltage (Vgs) of 6V and a threshold voltage of 700mV. Includes fast switching characteristics with turn-on and turn-off delay times of 50ns and a fall time of 25ns. Rated for a maximum power dissipation of 300mW and a wide operating temperature range from -55°C to 150°C.
PackageSC
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI1032X-T1-GE3 technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 200mA |
| Drain to Source Resistance | 5R |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 5R |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 6V |
| Height | 0.8mm |
| Lead Free | Lead Free |
| Length | 1.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 5R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 700mV |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 50ns |
| Weight | 0.001058oz |
| Width | 0.95mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI1032X-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI1032X-T1-GE3 to view detailed technical specifications.
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