N-channel JFET transistor, surface mountable in an SC-89 package. Features 20V drain-source voltage (Vdss) and 200mA continuous drain current (ID). Offers a low drain-source on-resistance (Rds On) of 5 Ohms. Operates with a gate-source voltage (Vgs) of 6V and a threshold voltage of 700mV. Includes fast switching characteristics with turn-on and turn-off delay times of 50ns and a fall time of 25ns. Rated for a maximum power dissipation of 300mW and a wide operating temperature range from -55°C to 150°C.
PackageSC
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay SI1032X-T1-GE3 technical specifications.
General
Package/Case
SC
Continuous Drain Current (ID)
200mA
Drain to Source Resistance
5R
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
5R
Fall Time
25ns
Gate to Source Voltage (Vgs)
6V
Height
0.8mm
Lead Free
Lead Free
Length
1.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300mW
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
5R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
700mV
Turn-Off Delay Time
50ns
Turn-On Delay Time
50ns
Weight
0.001058oz
Width
0.95mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI1032X-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI1032X-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
