
Dual N-channel JFET for general-purpose small signal applications. Features 20V drain-source voltage (Vdss) and 180mA continuous drain current (ID). Offers 5 Ohm maximum drain-source on-resistance (Rds On Max) and 25ns fall time. Packaged in a 6-pin SC-89 surface-mount package, this component is halogen-free and RoHS compliant. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 250mW.
Vishay SI1034X-T1-GE3 technical specifications.
| Package/Case | SC |
| Continuous Drain Current (ID) | 180mA |
| Drain to Source Resistance | 5R |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 10R |
| Fall Time | 25ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 5V |
| Height | 0.6mm |
| Lead Free | Lead Free |
| Length | 1.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Nominal Vgs | 1.2V |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 5R |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 50ns |
| Weight | 0.001129oz |
| Width | 1.2mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI1034X-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
