Dual N-channel JFET for general-purpose small signal applications. Features 20V drain-source voltage (Vdss) and 180mA continuous drain current (ID). Offers 5 Ohm maximum drain-source on-resistance (Rds On Max) and 25ns fall time. Packaged in a 6-pin SC-89 surface-mount package, this component is halogen-free and RoHS compliant. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 250mW.
PackageSC
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI1034X-T1-GE3 technical specifications.
General
Package/Case
SC
Continuous Drain Current (ID)
180mA
Drain to Source Resistance
5R
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
10R
Fall Time
25ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
5V
Height
0.6mm
Lead Free
Lead Free
Length
1.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
250mW
Mount
Surface Mount
Nominal Vgs
1.2V
Number of Channels
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
5R
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
50ns
Turn-On Delay Time
50ns
Weight
0.001129oz
Width
1.2mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI1034X-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI1034X-T1-GE3 to view detailed technical specifications.
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