The SI1037X-T1-GE3 is a P-CHANNEL MOSFET from Vishay with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 770mA and a drain to source voltage of 20V. The device is surface mount and has a maximum power dissipation of 170mW. It is RoHS compliant and part of the TrenchFET series.
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| Continuous Drain Current (ID) | 770mA |
| Drain to Source Resistance | 350mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 8V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 170mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 195mR |
| Resistance | 0.195R |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 10ns |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI1037X-T1-GE3 to view detailed technical specifications.
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