Dual N-channel and P-channel MOSFET driver for interface applications. Features 8V drain-source voltage and 430mA continuous drain current. Offers low 625mΩ drain-source on-resistance. Surface mountable in a compact 1.7mm x 1.2mm x 0.6mm SOT-563F package. Operates from -55°C to 150°C.
PackageSC
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
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Technical Specifications
Vishay SI1040X-T1-GE3 technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 430mA |
| Drain to Source Resistance | 625mR |
| Drain to Source Voltage (Vdss) | 8V |
| Drain-source On Resistance-Max | 625MR |
| Height | 0.6mm |
| Interface | On/Off |
| Lead Free | Lead Free |
| Length | 1.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Output Current | 430mA |
| Max Power Dissipation | 174mW |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Number of Outputs | 1 |
| Output Configuration | High Side |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Weight | 0.001129oz |
| Width | 1.2mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI1040X-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI1040X-T1-GE3 to view detailed technical specifications.
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