N-Channel Silicon FET, a single-element, surface-mount junction field-effect transistor designed for small signal applications. Features a maximum drain-source voltage of 20V and a continuous drain current of 530mA. Offers a maximum drain-source on-resistance of 420mR and a threshold voltage of 1V. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 220mW. Packaged in SC-89, 3-pin configuration, supplied on tape and reel.
PackageSC
MountingSurface Mount
PolarityN-CHANNEL
Power220mW
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Technical Specifications
Vishay SI1062X-T1-GE3 technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 530mA |
| Drain to Source Resistance | 350mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 420mR |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 43pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 220mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 220mW |
| Rds On Max | 420mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 2ns |
| Weight | 0.001058oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI1062X-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI1062X-T1-GE3 to view detailed technical specifications.
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