N-channel MOSFET transistor featuring 30V drain-source voltage and 1.2A continuous drain current. Surface mountable in a 6-pin SC-89 package, this component offers a low Rds(on) of 99mR. Key switching characteristics include a 10ns turn-on delay and 22ns fall time, with input capacitance at 385pF. Operating temperature range spans -55°C to 150°C, with a maximum power dissipation of 236mW.
PackageSC
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI1070X-T1-GE3 technical specifications.
General
Package/Case
SC
Continuous Drain Current (ID)
1.2A
Drain to Source Resistance
99mR
Drain to Source Voltage (Vdss)
30V
Fall Time
22ns
Gate to Source Voltage (Vgs)
12V
Height
0.6mm
Input Capacitance
385pF
Length
1.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
236mW
Mount
Surface Mount
Nominal Vgs
1.55V
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
99mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
14ns
Turn-On Delay Time
10ns
Weight
0.001129oz
Width
1.2mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI1070X-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI1070X-T1-GE3 to view detailed technical specifications.
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