N-channel MOSFET transistor featuring 30V drain-source voltage and 1.2A continuous drain current. Surface mountable in a 6-pin SC-89 package, this component offers a low Rds(on) of 99mR. Key switching characteristics include a 10ns turn-on delay and 22ns fall time, with input capacitance at 385pF. Operating temperature range spans -55°C to 150°C, with a maximum power dissipation of 236mW.
PackageSC
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI1070X-T1-GE3 technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 1.2A |
| Drain to Source Resistance | 99mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.6mm |
| Input Capacitance | 385pF |
| Length | 1.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 236mW |
| Mount | Surface Mount |
| Nominal Vgs | 1.55V |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 99mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.001129oz |
| Width | 1.2mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI1070X-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI1070X-T1-GE3 to view detailed technical specifications.
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