N-Channel MOSFET, TrenchFET® series, featuring 30V Drain-to-Source Voltage (Vdss) and 1.5A Continuous Drain Current (ID). Surface mount SOT-323 package with 132mR maximum Drain-to-Source On Resistance (Rds On). Offers fast switching with 2ns Turn-On Delay Time and 8ns Fall Time. Operates across a wide temperature range from -55°C to 150°C, with 500mW maximum power dissipation.
PackageSOT-323
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI1308EDL-T1-GE3 technical specifications.
General
Package/Case
SOT-323
Continuous Drain Current (ID)
1.5A
Drain to Source Resistance
132mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
132mR
Fall Time
8ns
Gate to Source Voltage (Vgs)
12V
Height
1mm
Input Capacitance
105pF
Lead Free
Lead Free
Length
2.2mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
132mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
600mV
Turn-Off Delay Time
8ns
Turn-On Delay Time
2ns
Weight
0.004395oz
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI1308EDL-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI1308EDL-T1-GE3 to view detailed technical specifications.
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