P-channel, small-signal MOSFET transistor designed for general-purpose applications. Features a 20V drain-source voltage (Vdss) and a continuous drain current (ID) of 1.4A. Offers a low drain-source on-resistance (Rds On) of 150mR. Operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 568mW. Packaged in a compact SOT-363-6 (SC-70) surface-mount case, this RoHS-compliant component is supplied on tape and reel.
PackageSOT-363-6
MountingSurface Mount
PolarityP-CHANNEL
Power568mW
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Technical Specifications
Vishay SI1403BDL-T1-E3 technical specifications.
General
Package/Case
SOT-363-6
Continuous Drain Current (ID)
1.4A
Drain to Source Resistance
150mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
150mR
Fall Time
30ns
Gate to Source Voltage (Vgs)
12V
Height
1mm
Lead Free
Lead Free
Length
2mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
568mW
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
568mW
Radiation Hardening
No
Rds On Max
150mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
28ns
Turn-On Delay Time
13ns
Weight
0.000265oz
Width
1.25mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI1403BDL-T1-E3 Datasheet
Download the complete datasheet for Vishay SI1403BDL-T1-E3 to view detailed technical specifications.
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