P-channel MOSFET, 8V Vds, 1.6A continuous drain current, and 112mΩ max Rds(on). Features a SOT-363-6 surface mount package, 1.47W max power dissipation, and operates from -55°C to 150°C. Ideal for applications requiring efficient switching with fast response times, including 10ns turn-on and 26ns fall times. This component is lead-free and RoHS compliant.
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Vishay SI1405BDH-T1-E3 technical specifications.
| Package/Case | SOT-363-6 |
| Continuous Drain Current (ID) | 1.6A |
| Drain to Source Resistance | 205mR |
| Drain to Source Voltage (Vdss) | 8V |
| Drain-source On Resistance-Max | 112mR |
| Fall Time | 26ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1mm |
| Input Capacitance | 305pF |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.47W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 112mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.000265oz |
| Width | 1.25mm |
| RoHS | Compliant |
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